GaN-based high electron mobility transistors (GaN-HEMTs) are essential for next-generation RF applications, including 5G communication, satellite systems, radar, and high-efficiency power amplifiers. These devices deliver high-frequency performance, power density, and thermal reliability far beyond what conventional silicon technologies can achieve.
As demand accelerates across Asia and global growth markets, device manufacturers must address new process challenges to ensure yield, consistency, and device reliability—especially in mass production environments.
Manufacturing GaN-HEMT devices requires careful process control across multiple layers and interfaces. Critical challenges include:
Etching control of GaN and AlGaN layers:
High selectivity and damage minimization are essential to avoid impacting active layers, especially when dealing with compound structures and thin films.
Preserving the 2DEG channel:
Plasma-induced damage or stress can degrade the two-dimensional electron gas (2DEG) that enables GaN-HEMT performance. Low-damage processing is key to maintaining high carrier mobility.
Surface passivation and insulation:
Deposited films must be uniform, low-stress, and thermally stable to isolate RF structures and enhance breakdown voltage.
High-speed backside via etching:
For devices requiring back-side metallization or thermal management vias, fast and uniform etching through GaN or other materials is required.
SPT provides plasma etching and PECVD systems engineered to meet the unique demands of GaN-based HEMT devices with an emphasis on precision, repeatability, and damage mitigation.
High-selectivity etching of GaN/AlGaN without damaging underlying 2DEG
Smooth sidewalls with minimal surface roughness
Excellent control over mesa, gate, and via structures
Formation of passivation and insulation films (e.g., SiNₓ) with low ion damage
Optimized for high breakdown voltage and thermal stability
Tunable stress control for high-frequency substrates
Etching of through-substrate vias for heat dissipation or interconnects
Consistent etch rate across large wafers with minimal taper