Cracking and peeling caused by increased film thickness, adhesion issues arising from substrate materials and interface conditions, and the breakage of beam structures during sacrificial layer etching—thin-film deposition processes for MEMS and semiconductor devices require meeting complex, multi-faceted demands regarding film thickness, film quality, and film stress.
SPT’s PECVD system, Cetus, utilizes multiple RF biasing modes to enable the optimization of deposition conditions tailored to specific device requirements. From thick SiO₂ deposition to the fabrication of fragile structures using low-stress SiN, we offer customized deposition processes to suit your application.
This document introduces three deposition and structural fabrication case studies, accompanied by cross-sectional/SEM images:
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Thick SiO₂ Deposition on Si
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Thick SiO₂ Deposition on AI
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Fabrication of Low-Stress SiN Structures via Si Sacrificial Layer Etching
When high stress is present in a SiN film, the beam structures are prone to fracture during the etching of the Si sacrificial layer. This material explains a case study in which a stress-free SiN film was achieved through an RF mode switching process, enabling the successful fabrication of delicate and fragile structures.
