While dielectric films such as SiO₂ and SiN are widely used in MEMS and semiconductor devices, optical, RF, and power devices rely on compound semiconductors including InP, GaN, GaAs, and SiC. Because these materials exhibit significantly different physical and chemical properties, achieving both high uniformity and precise profile control across all of them using a single system or generic recipe is challenging. This requires custom-optimized plasma sources and RF power delivery designed specifically for each material system.

This report explores equipment selection and process design strategies tailored to diverse material characteristics, drawing on practical etch results from three versatile RIE platforms designed to handle everything from standard dielectrics to hard-to-etch compound semiconductors: the Sirius (high-density plasma generation), the Spica (ultra-low-damage, high-precision processing), and the Sculptor (engineered for superior uniformity and profile control in challenging materials).

 Specifically, the report highlights:
* High-aspect-ratio vertical etching of deep SiO₂ structures
* High-precision InP trench and microlens etching with optimized mask selectivity
* Long-duration SiC via etching demonstrating exceptional within-wafer uniformity and run-to-run stability.

For full quantitative datasets and detailed process results, please download the complete report. We hope this serves as a valuable technical resource for optimizing your etch processes across both dielectric films and compound semiconductors.